vishay siliconix si4955dy new product document number: 72241 s-61006-rev. c, 12-jun-06 www.vishay.com 1 asymmetrical dual p-channel 30-v/20-v (d-s) mosfets features ? trenchfet ? power mosfets ? low gate drive (2.5 v) capability for channel 2 applications ? game station - load switch product summary v ds (v) r ds(on) ( )i d (a) channel-1 - 30 0.054 at v gs = - 10 v - 5.0 0.100 at v gs = - 4.5 v - 3.7 channel-2 - 20 0.027 at v gs = - 4.5 v - 7.0 0.035 at v gs = - 2.5 v - 6.2 0.048 at v gs = - 1.8 v - 5.2 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 orderin g information: SI4955DY-T1-E3 ( lead ( pb ) -free ) s 1 g 1 d 1 s 2 g 2 d 2 p-channel mosfet p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel-1 channel-2 unit 10 sec steady state 10 sec steady state drain-source voltage v ds - 30 - 20 v gate-source voltage v gs 20 8 continuous drain current (t j = 150 c) a t a = 25 c i d - 5.0 - 3.8 - 7.0 - 5.3 a t a = 70 c - 4.0 - 3.0 - 5.6 - 4.2 pulsed drain current i dm - 20 continuous source current (diode conduction) a i s - 1.7 - 0.9 - 1.7 - 0.9 maximum power dissipation a t a = 25 c p d 2.0 1.1 2 1.1 w t a = 70 c 1.3 0.7 1.3 0.7 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol channel-1 channel-2 unit typ max typ max maximum junction-to-ambient a t 10 sec r thja 55 62.5 58 62.5 c/w steady state 90 110 91 110 maximum junction-to-foot (drain) steady state r thjf 33 40 34 40 rohs compliant
www.vishay.com 2 document number: 72241 s-61006-rev. c, 12-jun-06 vishay siliconix si4955dy notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a ch-1 - 1.0 - 3 v v ds = v gs , i d = - 250 a ch-2 - 0.4 - 1 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na v ds = 0 v, v gs = 8 v ch-2 100 zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v ch-1 - 1 a v ds = - 20 v, v gs = 0 v ch-2 - 1 v ds = - 30 v, v gs = 0 v, t j = 85 c ch-1 - 5 v ds = - 20 v, v gs = 0 v, t j = 85 c ch-2 - 5 on-state drain current a i d(on) v ds - 5 v, v gs = - 10 v ch-1 - 20 a v ds - 5 v, v gs = - 10 v ch-2 - 20 drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 5.0 a ch-1 0.044 0.054 v gs = - 4.5 v, i d = - 7.0 a ch-2 0.022 0.027 v gs = - 4.5 v, i d = - 3.7 a ch-1 0.082 0.100 v gs = - 2.5 v, i d = - 6.2 a ch-2 0.029 0.035 v gs = - 1.8 v, i d = - 3 a ch-2 0.039 0.048 forward transconductance a g fs v ds = - 15 v, i d = - 5.0 a ch-1 10 s v ds = - 15 v, i d = - 3 a ch-2 25 diode forward voltage a v sd i s = - 1.7 a, v gs = 0 v ch-1 - 0.80 - 1.2 v i s = - 1.7 a, v gs = 0 v ch-2 - 0.80 - 1.2 dynamic b total gate charge q g channel-1 v ds = - 15 v, v gs = - 10 v, i d = - 5.0 a channel-2 v ds = - 10 v, v gs = - 4.5 v, i d = - 7 a ch-1 12.5 19 nc ch-2 21 25 gate-source charge q gs ch-1 2.1 ch-2 2.6 gate-drain charge q gd ch-1 3.5 ch-2 6.0 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = - 15 v, r l = - 15 i d ? - 1 a, v gen = - 10 v, r g = 6 channel-2 v dd = - 10 v, r l = 10 i d ? - 1 a, v gen = - 4.5 v, r g = 6 ch-1 7 15 ns ch-2 20 30 rise time t r ch-1 10 15 ch-2 40 60 turn-off delay time t d(off) ch-1 30 45 ch-2 125 190 fall time t f ch-1 22 35 ch-2 85 130 source-drain reverse recovery time t rr i f = - 1.7 a, di/dt = 100 a/s ch-1 25 60 i f = - 1.7 a, di/dt = 100 a/s ch-2 64 90
document number: 72241 s-61006-rev. c, 12-jun-06 www.vishay.com 3 vishay siliconix si4955dy channel 1 typical characteristics 25 c unless noted output characteristics on-resistance vs. drain current gate charge v ds - drain-to-source voltage (v) - drain current (a) i d 0 4 8 12 16 20 0123456 v gs = 10 thru 5 v 4 v 3 v - on-resistance ( ) r ds(on) i d - drain current (a) 0.00 0.04 0.08 0.12 0.16 0.20 048121620 v gs = 10 v v gs = 4.5 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 2 4 6 8 10 0 2 4 6 8 10 12 1 4 v ds = 15 v i d = 5.0 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 012345 t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 25 c v ds - drain-to-source voltage (v) c - capacitance (pf) 0 200 400 600 800 1000 0 6 12 18 24 30 c rss c oss c iss t j - junction temperature ( c) (normalized) - on-resistance r ds(on) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 5.0 v
www.vishay.com 4 document number: 72241 s-61006-rev. c, 12-jun-06 vishay siliconix si4955dy channel 1 typical characteristics 25 c unless noted source-drain diode forward voltage threshold voltage v sd - source-to-drain voltage (v) - source current (a) i s 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c 30 10 1 t j = 25 c variance (v) v gs(th) t j - temperature (c) - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a on-resistance vs. gate-to-source voltage single pulse power - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0.00 0.04 0.08 0.12 0.16 0.20 0246810 i d = 5 a i d = 2 a 0 20 30 10 15 power (w) time ( sec ) 25 1 100 600 10 10 - 1 10 - 2 10 - 3 5 safe operating area v ds - drain-to-source voltage (v) - drain current (a) i d 10 0.01 0.1 1 10 100 1 100 dc 0.1 p(t) = 10 p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 t a = 25 c single pulse i dm limited i d(on) limited r ds(on) limited bv dss limited
document number: 72241 s-61006-rev. c, 12-jun-06 www.vishay.com 5 vishay siliconix si4955dy channel 1 typical characteristics 25 c unless noted normalized thermal transient impedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 - 3 10 - 2 110 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance
www.vishay.com 6 document number: 72241 s-61006-rev. c, 12-jun-06 vishay siliconix si4955dy channel 2 typical characteristics 25 c unless noted output characteristics on-resistance vs. drain current gate charge 0 4 8 12 16 20 012345 v gs = 5 thru 2 v v ds - drain-to-source voltage (v) - drain current (a) i d 1 v 1.5 v - on-resistance ( ) r ds(on) 0.00 0.02 0.04 0.06 0.08 0.10 048121620 i d - drain current (a) v gs = 1.8 v v gs = 2.5 v v gs = 4.5 v 0 1 2 3 4 5 0 4 8 12162024 v ds = 10 v i d = 7 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.4 0.8 1.2 1.6 2.0 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 500 1000 1500 2000 2500 3000 048121620 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 7 a t j - junction temperature ( c) (normalized) - on-resistance r ds(on)
document number: 72241 s-61006-rev. c, 12-jun-06 www.vishay.com 7 vishay siliconix si4955dy channel 2 typical characteristics 25 c unless noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 20 10 1 v sd - source-to-drain voltage (v) - source current (a) i s t j = 150 c t j = 25 c - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature ( c) on-resistance vs. gate-to-source voltage single pulse power 0.00 0.02 0.04 0.06 0.08 0.10 012345 i d = 7 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 20 30 10 15 power (w) time ( sec ) 25 1 100 600 10 10 - 1 10 - 2 10 - 3 5 safe operating area v ds - drain-to-source voltage (v) - drain current (a) i d 10 0.01 0.1 1 10 100 1 100 dc 0.1 p(t) = 10 p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 t a = 25 c single pulse i dm limited i d(on) limited r ds(on) limited bv dss limited
www.vishay.com 8 document number: 72241 s-61006-rev. c, 12-jun-06 vishay siliconix si4955dy channel 2 typical characteristics 25 c unless noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?72241 . normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 91 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 - 3 10 - 2 110 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
